vs-15eth06spbf, VS-15ETH06-1PBF www.vishay.com vishay semiconductors revision: 09-jul-15 1 document number: 94003 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 15 a fred pt ? features ? hyperfast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? single die center tap module ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. ? the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. ? these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. ? the extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-263ab (d 2 pak), to-262aa i f(av) 15 a v r 600 v v f at i f 1.3 v t rr (typ.) 22 ns t j max. 175 c diode variation single diode to-262aa to-263ab (d 2 pak ) anode 1 3 ba s e cathode 2 n/c anode 1 3 2 n/c v s -15eth06 s p b fv s -15eth06-1p b f absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 140 c 15 a non-repetitive peak surge current i fsm t j = 25 c 120 peak repetitive forward current i fm 30 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 15 a - 1.8 2.2 i f = 15 a, t j = 150 c - 1.3 1.6 reverse leakage current i r v r = v r rated - 0.2 50 a t j = 150 c, v r = v r rated - 30 500 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-15eth06spbf, VS-15ETH06-1PBF www.vishay.com vishay semiconductors revision: 09-jul-15 2 document number: 94003 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 22 30 ns i f = 15 a, di f /dt = 100 a/s, v r = 30 v - 28 35 t j = 25 c i f = 15 a ? di f /dt = 200 a/s ? v r = 390 v -29- t j = 125 c - 75 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7 - reverse recovery charge q rr t j = 25 c - 57 - c t j = 125 c - 300 - reverse recovery time t rr t j = 125 c i f = 15 a ? di f /dt = 800 a/s ? v r = 390 v -51-ns peak recovery current i rrm -20- a reverse recovery charge q rr - 580 - nc thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage ? temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case per leg r thjc -1.01.3 c/w thermal resistance, ? junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-263ab (d 2 pak) 15eth06s case style to-262aa 15eth06-1 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 i f - instantaneous forwardcurrent (a) v f - forward voltage drop (v) t j = 175 c t j = 150 c t j = 25 c 0 100 200 300 400 500 600 i r - reverse current (a) v r - reverse voltage (v) 0.001 0 0.01 0.1 1 10 100 1000 t j = 100 c t j = 175 c t j = 150 c t j = 125 c t j = 25 c
vs-15eth06spbf, VS-15ETH06-1PBF www.vishay.com vishay semiconductors revision: 09-jul-15 3 document number: 94003 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 1000 100 10 0 100 200 300 400 500 600 c t - junction capacitance (pf) v r - reverse voltage (v) t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 120 130 140 150 160 170 180 see note (1) square wave (d = 0.50) 80 % rated v r applied 110 dc 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 0 5 10 15 20 25 30 35 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rms limit
vs-15eth06spbf, VS-15ETH06-1PBF www.vishay.com vishay semiconductors revision: 09-jul-15 4 document number: 94003 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical reverse recovery vs. di f /dt fig. 8 - typical stored charge vs. di f /dt fig. 9 - reverse recovery waveform and definitions 100 0 100 1000 t rr (ns) di f /dt (a/s) 20 40 60 80 i f = 30 a i f = 15 a v r = 390 v t j = 125 c t j = 25 c 1000 0 100 1000 q rr (nc) di f /dt (a/s) 200 400 600 800 i f = 30 a i f = 15 a v r = 390 v t j = 125 c t j = 25 c q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-15eth06spbf, VS-15ETH06-1PBF www.vishay.com vishay semiconductors revision: 09-jul-15 5 document number: 94003 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per reel minimum order quantity packaging description vs-15eth06spbf 50 1000 antistatic plastic tubes vs-15eth06trrspbf 800 800 13" diameter plastic tape and reel vs-15eth06strlpbf 800 800 13" diam eter plastic tape and reel VS-15ETH06-1PBF 50 1000 antistatic plastic tubes links to related documents dimensions to-263ab (d 2 pak) www.vishay.com/doc?95046 to-262aa www.vishay.com/doc?95419 part marking information www.vishay.com/doc?95008 packaging information www.vishay.com/doc?95032 2 - current rating (15 a) 3 - e = single diode 4 - t = to-220, d 2 pak 5 - h = hyperfast rectifier 6 - voltage rating (06 = 600 v) - pbf = lead (pb)-free 7 - s = d 2 pak -1 = to-262 8 - none = tube (50 pieces) trl = tape and reel (left oriented, for d 2 pak package) trr = tape and reel (right oriented, for d 2 pak package) 9 device code 5 1 3 2 4 6 7 8 9 vs- 15 e t h 06 s trl pbf 1 - vishay semiconductors product
document number: 95014 for technical questi ons concerning discr ete products, contact: diodes-tech@vishay.com www.vishay.com revision: 31-mar-09 for technical questi ons concerning module products, contact: ind-modules@vishay.com 1 d 2 pak, to-262 outline dimensions vishay high power products dimensions for d 2 pak in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plastic body (3) thermal pad contour optional within dimension e, l1, d1 and e1 (4) dimension b1 and c1 apply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) v ie w a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l ga u ge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: n one (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout mi n . 11.00 (0.43) mi n . 9.65 (0.3 8 ) mi n . 3. 8 1 (0.15) mi n . 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (t w o die)/open (one die) 2., 4. - cathode 3. - anode
www.vishay.com for technical questions c oncerning discrete products, contact: diodes-tech@vishay.com document number: 95014 2 for technical questions concer ning module products, contact: ind-modules@vishay.com revision: 31-mar-09 outline dimensions vishay high power products d 2 pak, to-262 dimensions for to-262 in millimeters and inches notes (1) dimensioning and tolerancing as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plastic body (3) thermal pad contour optional within dimension e, l1, d1 and e1 (4) dimension b1 and c1 apply to base metal only (5) controlling dimension: inches (6) outline conform to jedec to-262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b 1, b 3 ( b , b 2) c1 c section b - b and c - c scale: n one section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (dat u m a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b 2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (t w o die)/open (one die) 2., 4. - cathode 3. - anode
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